CBP, 4,4′-Bis(N-carbazolyl)-1,1′-biphenyl, is one of the most widely-used host materials for efficient fluorescent and phosphorescent organic light-emitting diodes with high hole mobility. This is due to its electron-rich property from two carbazolyl units.
It has been demonstrated that CBP can efficiently host green, yellow and red phosphorescent emitters with triplet energies smaller than that of CBP (ET = 2.6 eV) [1].
General Information
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CAS number
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58328-31-7
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Chemical formula
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C36H24N2
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Molecular weight
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484.59 g/mol
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HOMO/LUMO
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HOMO 6.0 eV, LUMO 2.9 eV
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Synonyms
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CBP, 4,4′-Bis(9-carbazolyl)-1,1′-biphenyl, 4,4-N,N′-Dicarbazole-1,1′-biphenyl,DCBP, BSBCz, BSB-Cz
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Classification / Family
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Carbazole derivatives, Hole-injection layer materials, Hole transport layer materials, Hole blocking layer materials, Phosphorescent host materials, Light-emitting fiodes, Organic electronics, Sublimed materials
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Product Details
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Purity
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> 99.5% (sublimed)
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Melting point
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281-285 (lit.) °C
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Appearance
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White powder
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*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials page.
Chemical Structure
Chemical structure of CBP, CAS 58328-31-7
Device Structure(s)
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Device structure
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ITO/MoO3 (3 nm)/CBP: 20 wt% Ir(ppy)3: 4 wt% FIrpic (30 nm)/TAZ (50 nm) [8]
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Colour
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Green 
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Max. Luminance
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27,524 cd/m2
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Max. Current Efficiency
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71.2 cd/A
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Device structure
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ITO /TAPC/(1wt% DPB:99wt% tri-PXZ-TRZ*):CBP (15:85)/LiF/Al [6]
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Colour
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Red 
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Max EQE
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17.5%
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Max. Power Efficiency
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28 lm W−1
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Device structure
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ITO/MO3 (1 nm)/CBP (35 nm)/8 wt% Ir(ppy)2(acac):CBP/TPBi (65 nm)/LiF/Al (100 nm) [7]
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Colour
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Green
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EQE at 100 cd/m2
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23.4
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Current Efficiency at 100
cd/m2
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81 cd/A
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Power Efficiency at 100
cd/m2
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78.0 lm W−1
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Device structure
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ITO/MoOx (2 nm)/m-MTDATA: MoOx (30 nm, 15 wt.%)/m-MTDATA (10 nm)/Ir(ppz)3(10 nm)/CBP:PO-01* (3 nm, 6 wt.%)/Ir(ppz)3 (1 nm)/DBFDPOPhCz*:FIrpic (10 nm,10 wt.%)/Bphen (36 nm)/LiF (1 nm)/Al [9]
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Colour
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White 
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Max. EQE
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12.2%
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Max. Current Efficiency
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42.4 cd/A
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Max. Power Efficiency
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47.6 lm W−1
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Device structure
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ITO/NPB (30 nm)/CBP:8 wt% (t-bt)2Ir(acac)* (15 nm)/BPhen(35 nm)/LiF (1 nm)/CoPc:C60 (4:1) (5 nm)/MoO3(5 nm)/NPB(30 nm)/CBP:8 wt% (t-bt)2Ir(acac)* (15 nm)/BPhen (35 nm)/Mg:Ag (100 nm) [10]
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Colour
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Yellow 
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Max. EQE
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16.78%
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Max. Luminance
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42,236 cd/m2
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Max. Current Efficiency
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50.2 cd/A
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Max. Power Efficiency
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12.9 lm W−1
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Device structure
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ITO/NPD* (40 nm)/9%-Ir(piq)3:CBP (20 nm)/BPhen (50 nm)/KF (1 nm)/Al [11]
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Colour
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Red
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Max. Luminance
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11,000 cd/m2
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Max EQE
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10.3%
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Max. Power Efficiency
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8.0 lm W−1
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Device structure
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ITO/0.4 wt% F4TCNQ doped α NPD (30 nm)/ 5 wt% Ir(ppy)3 doped CBP (50 nm)/BPhen (30 nm)/20 wt% TCNQ mixed BPhen (1.5 nm)/Al [12]
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Colour
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Green
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Luminance at 15 V
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1,320 cd/m2
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Power Efficiency at 14 V
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56.6 lm W−1
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Current Efficiency at 14 V
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23.17 cd/A
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Device structure
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ITO/F4TCNQ (3 nm)/MeO-Spiro-TPD (27 nm)/CBP + BCzVbi* (50 nm)/BPhen (10 nm)/TCNQ mixed BPhen (1.5 nm)/Al [13]
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Colour
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Red
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Luminance at 10 mA/cm2
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1,790 cd/m2
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Power Efficiency at 10 mA/cm2
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4.65 lm W−1
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Current Efficiency at 10 mA/cm2
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18.0 cd/A
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